951 - 956 |
Quantum size effect on the luminous properties of excitonic states in a quasi-one-dimensional wurtzite GaN nanowire: Two-parameter variational approach Zhang L, Shi JJ |
957 - 963 |
Gas sensing property of lithium tetraborate clad modified fiber optic sensor Mohandoss R, Dhanuskodi S, Renganathan B, Sastikumar D |
964 - 968 |
Thermally and optically induced effects on sub-band gap absorption in nanocrystalline CdSe (nc-CdSe) thin films Sharma K, Al-Kabbi AS, Saini GSS, Tripathi SK |
969 - 974 |
Effect of helium mixing on excitation temperature and nitrogen dissociation in inductively coupled plasma Abrar M, Qayyum A, Gilani AR, Khan AW, Saeed A, Naseer S, Zakaullah M |
975 - 980 |
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range Kumar AA, Rao LD, Reddy VR, Choi CJ |
981 - 984 |
Experimental and theoretical studies for the gain of the neutron irradiated erbium doped fiber amplifier Hamdalla TA, Nafee SS |
985 - 989 |
Concentration-dependent electrochemical supercapacitive performance of Fe2O3 Lokhande BJ, Ambare RC, Mane RS, Bharadwaj SR |
990 - 995 |
Effective frequency-dependent anchoring coefficient and rotational viscosity of nematic liquid crystals Yu JS, Kim JH |
996 - 1000 |
Multiplexed biosample delivery with surface patterned microstructure for microcantilever Hur D, Jang HC, Lee JH |
1001 - 1007 |
Dynamic mechanism of HIV replication inhibitor peptide encapsulated into carbon nanotubes Chen BD, Yang CL, Yang JS, Wang MS, Ma XG |
1008 - 1013 |
A polymer surface for antibody detection by using surface plasmon resonance via immobilized antigen Puttharugsa C, Wangkam T, Houngkamhang N, Yodmongkol S, Gajanandana O, Himananto O, Sutapun B, Amarit R, Somboonkaew A, Srikhirin T |
1014 - 1020 |
Dielectric and electrical properties of a tungsten bronze tantalate ceramic Padhee R, Das PR, Parida BN, Behera S, Choudhary RNP |
1021 - 1024 |
Well-designed rectangular cavity resonator for FMR experiment Kim SI, You CY, Park SY |
1025 - 1031 |
Oxygen vacancy and dopant concentration dependent magnetic properties of Mn doped TiO2 nanoparticle Choudhury B, Choudhury A |
1032 - 1036 |
Reduction of surface defects on the GaP window layer of 630 nm AlGaInP LED using post-Zn diffusion process Lee HJ, Kim SU, So SJ, Cho YD, Kim YJ, Ahn SC, Lee CH |
1037 - 1041 |
Interfacial electronic structure of molybdenum oxide on the fullerene layer, a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes Lim JT, Park JW, Yeom GY |
1042 - 1045 |
Enhancement of the light extraction of GaN-based green light emitting diodes via nanohybrid structures Son T, Jung KY, Park J |
1046 - 1049 |
Structural analysis of Cu(In,Ga)Se-2 films fabricated by using sputtering and post-selenization Pak S, Kim J |
1050 - 1054 |
Electrical breakdown of microwave plasma in water Hattori Y, Mukasa S, Toyota H, Nomura S |
1055 - 1059 |
Fabrication of textured KNNT ceramics by reactive template grain growth using NN templates Hussain A, Kim JS, Song TK, Kim MH, Kim WJ, Kim SS |
1060 - 1063 |
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers Yu HY, Battal E, Okyay AK, Shim J, Park JH, Baek JW, Saraswat KC |
1064 - 1068 |
Piezoelectric activities and domain patterns of orthorhombic Ba(Zr,Ti)O-3 ceramics Zheng P, Song KX, Qin HB, Zheng L, Zheng LM |
1069 - 1074 |
Differences in the catalyst removal from single- and double-walled carbon nanotubes Jang JW, Lee KW, Lee CE, Kim B, Lee CJ |
1075 - 1081 |
Condensable InP quantum dots solid Dung MX, Tung DD, Jeong HD |
1082 - 1089 |
Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor Ghobadi N, Abdi Y |
1090 - 1095 |
Synthesis and characterization of hexagonal ferrite Co2Sr2Fe12O22 with doped polypyrrole composites Ali I, Shakoor A, Islam MU, Saeed M, Ashiq MN, Awan MS |
1096 - 1100 |
Effect of hot-consolidation method on the superconducting properties of B- and C-doped FeSe0.5Te0.5 Ahn JH, Oh S |
1101 - 1108 |
The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range Korucu D, Turut A, Altindal S |
1109 - 1111 |
Adjustable wavelength and lifetime in Mn4+ ion doped phosphate glasses Ming CG, Liu HX, Song F, Ren XB, An LQ, Hao YM, Wang GZ |
1112 - 1118 |
The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes Fiat S, Polat I, Bacaksiz E, Kompitsas M, Cankaya G |
1119 - 1127 |
Electrostrictive properties of thermoplastic polyurethane elastomer: Effects of urethane type and soft-hard segment composition Petcharoen K, Sirivat A |
1128 - 1136 |
An approach to hybrid inorganic nanoparticles in reactive PS-b-PMSMA amphiphilic copolymers Yu YY, Tsai CL |
1137 - 1142 |
Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes Kumar A, Vinayak S, Singh R |
1143 - 1149 |
Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors Lee JS, Seo JH, Cho S, Lee JH, Kang SW, Bae JH, Cho ES, Kang IM |
1150 - 1156 |
Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures Cetinkaya HG, Tecimer H, Uslu H, Altindal S |