화학공학소재연구정보센터

Current Applied Physics

Current Applied Physics, Vol.19, No.5 Entire volume, number list
ISSN: 1567-1739 (Print) 

In this Issue (12 articles)

557 - 562 Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots
Wang Y, Guo X, Wei JM, Yang C, Luo ZJ, Wang JH, Ding Z
563 - 569 Charge transport studies on chemically grown manganite based heterostructures
Gadani K, Sagapariya K, Rathod KN, Boricha H, Rajyaguru B, Shrimali VG, Joshi AD, Asokan K, Shah NA, Solanki PS
570 - 581 Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process
Zhang LX, Chen P, An T, Dai YW, Qin F
582 - 598 Near-eutectic Zn-Mg alloys: Interrelations of solidification thermal parameters, microstructure length scale and tensile/corrosion properties
Vida TA, Brito C, Lima TS, Spinelli JE, Cheung N, Garcia A
599 - 605 Properties of a rare earth free L1(0)-FeNi hard magnet developed through annealing of FeNiPC amorphous ribbons
Kim J, Kim S, Suh JY, Kim YJ, Kim YK, Choi-Yim H
606 - 613 Effect of complexing agent on the morphology and annealing temperature of CZTS kesterite thin films by electrochemical deposition
Toura H, Khattak YH, Baig F, Soucase BM, Touhami ME, Hartiti B
614 - 620 Investigation of ferromagnetic resonance and damping properties of CoFeB
Polat EG, Deger C, Yildiz F
621 - 628 Characteristic white light emission via down-conversion SrGdAlO4:Dy(3+)nanophosphor
Hooda A, Khatkar SP, Khatkar A, Chahar S, Devi S, Dalal J, Taxak VB
629 - 638 Fabrication and characterization of dual-band organic/inorganic photodetector for optoelectronic applications
Abd El-Khalek H, Abd-El Salam M, Amin FM
639 - 645 Fabrication and characterization of Yb/MoO3/(C,Yb) devices
Al Garni SE, Qasrawi AF
646 - 650 Measurement of the feedback coefficient by monitoring the power difference at power jump point in self-mixing vibration signal
Wang CC, Zhou JF, Zhao YK, Chen YZ, Yu BL, Lu L
651 - 656 Sub-lattice polarization states in anti-ferroelectrics and their relaxation process
Vopson MM, Tan X, Namvar E, Belusky M, Thompson SP, Kuncser V, Plazaola F, Unzueta I, Tang CC