검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations Khosru QDM, Nakajima A, Yoshimoto T, Yokoyama S Solid-State Electronics, 46(10), 1659, 2002 |
| No. | Article |
|---|---|
| 1 |
High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations Khosru QDM, Nakajima A, Yoshimoto T, Yokoyama S Solid-State Electronics, 46(10), 1659, 2002 |