검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Fabrication of 0.12 mu m pMOSFETs on high Ge fraction Si/Si1-xGex/Si(100) heterostructure with ultrashallow source/drain formed using B-doped SiGeCVD Lee D, Takehiro S, Sakuraba M, Murota J, Tsuchiya T Applied Surface Science, 224(1-4), 254, 2004 |