| 1 |
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Zheng X, Feng SW, Zhang YM, Jia YP
Solid-State Electronics, 147, 35, 2018 |
| 2 |
Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility > 35 x 10(6) cm(2)/V s in AlGaAs/GaAs quantum wells grown by MBE
Gardner GC, Fallahi S, Watson JD, Manfra MJ
Journal of Crystal Growth, 441, 71, 2016 |
| 3 |
Structural and Electronic Reconstructions at the LaAlO3/SrTiO3 Interface
Salluzzo M, Gariglio S, Torrelles X, Ristic Z, Di Capua R, Drnec J, Sala MM, Ghiringhelli G, Felici R, Brookes NB
Advanced Materials, 25(16), 2333, 2013 |
| 4 |
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization
Hasan MT, Bhuiyan AG, Yamamoto A
Solid-State Electronics, 52(1), 134, 2008 |
| 5 |
Critical thickness for giant thermoelectric Seebeck coefficient of 2DEG confined in SrTiO3/SrTi0.8Nb0.2O3 superlattices
Ohta H, Mune Y, Koumoto K, Mizoguchi T, Ikuhara Y
Thin Solid Films, 516(17), 5916, 2008 |
| 6 |
High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxy
Tampo H, Matsubara K, Yamada A, Shibata H, Fons P, Yamagata M, Kanie H, Niki S
Journal of Crystal Growth, 301, 358, 2007 |
| 7 |
A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
Kong YC, Zheng YD, Zhou CH, Deng YZ, Shen B, Gu SL, Zhang R, Han P, Jiang RL, Shi Y
Solid-State Electronics, 49(2), 199, 2005 |
| 8 |
Surface density analytical model of two-dimensional electron gas in HEMT structures
Ramovic R, Lukic P
Materials Science Forum, 453-454, 27, 2004 |
