검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon Gautier B, Fares B, Prudon G, Dupuy JC Applied Surface Science, 231-2, 136, 2004 |
| 2 |
Electrical properties of Si-SiO2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick Bauza D Solid-State Electronics, 47(10), 1677, 2003 |
| 3 |
Design considerations for CMOS near the limits of scaling Frank DJ, Taur Y Solid-State Electronics, 46(3), 315, 2002 |