검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane Abedin A, Moeen M, Cappetta C, Ostling M, Radamson HH Thin Solid Films, 613, 38, 2016 |
| 2 |
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition You SZ, Decoutere S, Nguyen ND, Van Huylenbroeck S, Sibaja-Hernandez A, Venegas R, Loo R, De Meyer K Thin Solid Films, 520(8), 3345, 2012 |
| 3 |
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M Solid-State Electronics, 60(1), 116, 2011 |
| 4 |
Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate Nguyen ND, Loo R, Caymax M Applied Surface Science, 254(19), 6072, 2008 |
| 5 |
Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100) Fang YY, D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menendez J Thin Solid Films, 516(23), 8327, 2008 |
| 6 |
Mechanism and Product Branching Ratios of the Sih3+sih3 Reaction Matsumoto K, Koshi M, Okawa K, Matsui H Journal of Physical Chemistry, 100(21), 8796, 1996 |