| 1 |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping
Joseph HB, Singh SK, Hariharan RM, Priya PA, Kumar NM, Thiruvadigal DJ
Applied Surface Science, 449, 823, 2018 |
| 2 |
Enhanced transconductance in a double-gate graphene field-effect transistor
Hwang BW, Yeom HI, Kim D, Kim CK, Lee D, Choi YK
Solid-State Electronics, 141, 65, 2018 |
| 3 |
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
Lin CY, Chang TC, Liu KJ, Chen LH, Chen CE, Tsai JY, Liu HW, Lu YH, Liao JC, Ciou FM, Lin YS
Thin Solid Films, 644, 41, 2017 |
| 4 |
Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate
Du JF, Chen NT, Jiang ZG, Bai ZY, Liu Y, Liu Y, Yu Q
Solid-State Electronics, 115, 60, 2016 |
| 5 |
Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack
Son SW, Park JH, Baek JM, Kim JS, Kim DK, Shin SH, Banerjee SK, Lee JH, Kim TW, Kim DH
Solid-State Electronics, 123, 63, 2016 |
| 6 |
Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel
Baek KJ, Na KY, Lee YJ, Kim YS
Solid-State Electronics, 103, 98, 2015 |
| 7 |
Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension
Chang WT, Lin YS, Shih CT
Solid-State Electronics, 110, 10, 2015 |
| 8 |
Trigate nanowire MOSFETs analog figures of merit
Kilchytska V, Makovejev S, Barraud S, Poiroux T, Raskin JP, Flandre D
Solid-State Electronics, 112, 78, 2015 |
| 9 |
High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers
Wu YC, Tsai JH, Chiang TK, Chiang CC, Wang FM
Solid-State Electronics, 92, 52, 2014 |
| 10 |
On the g(m)/I-D-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs
Rudenko T, Arshad MKM, Raskin JP, Nazarov A, Flandre D, Kilchytska V
Solid-State Electronics, 97, 52, 2014 |
