검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region Iwamoto K, Mizubayashi W, Ogawa A, Nabatame T, Satake H, Toriumi A Solid-State Electronics, 50(6), 999, 2006 |
| 2 |
Modeling of time dependence of hole current and prediction of Q(BD) and t(BD) for thin gate MOS devices based upon anode hole injection Quddus MT, DeMassa TA, Schroder DK, Sanchez JJ Solid-State Electronics, 45(10), 1773, 2001 |