화학공학소재연구정보센터
검색결과 : 31건
No. Article
1 Dislocation reduction in GaN grown on nano-patterned templates
Yang WC, Chen KY, Cheng KY, Wang YL, Hsieh KC, Cheng KY
Journal of Crystal Growth, 425, 141, 2015
2 Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates
Li KL, Sun YR, Dong JR, He Y, Zeng XL, Zhao YM, Yu SZ, Zhao CY
Thin Solid Films, 593, 193, 2015
3 Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes
ElAfandy RT, Majid MA, Ng TK, Zhao L, Cha D, Ooi BS
Advanced Functional Materials, 24(16), 2305, 2014
4 Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy
Barchuk M, Roder C, Shashev Y, Lukin G, Motylenko M, Kortus J, Patzold O, Rafaja D
Journal of Crystal Growth, 386, 1, 2014
5 HCl defect revelation in 200mm SiGe virtual substrates: A systematic study
Hartmann JM, Abbadie A
Thin Solid Films, 557, 110, 2014
6 Correlation between ZnO nanorod growth and the dislocations in AlN-based substrates
Fu QM, Wu JP, Ma ZB, Han YB, Tu YF
Applied Surface Science, 268, 209, 2013
7 Analysis of crystal defects on GaN-based semiconductors with advanced scanning probe microscope techniques
Hofer A, Benstetter G, Biberger R, Leirer C, Bruderl G
Thin Solid Films, 544, 139, 2013
8 Microstructures of GaN Thin Films Grown on Graphene Layers
Yoo H, Chung K, Choi YS, Kang CS, Oh KH, Kim M, Yi GC
Advanced Materials, 24(4), 515, 2012
9 Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates
Huang L, Liu F, Zhu JX, Kamaladasa R, Preble EA, Paskova T, Evans K, Porter L, Picard YN, Davis RF
Journal of Crystal Growth, 347(1), 88, 2012
10 Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements
Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ, Humphreys CJ
Thin Solid Films, 520(7), 3064, 2012