| 1 |
Gaussian Distribution of the Charge Traps in the Energy Gap of MDMO-PPV and Its Dependence on Synthesis Route Revealed by the Thermally Stimulated Current Spectroscopy
Pranaitis M, Sakavicius A, Janonis V, Kazukauskas V
Molecular Crystals and Liquid Crystals, 604(1), 96, 2014 |
| 2 |
Secondary Molecular Mobility in Amorphous Ethyl Cellulose: Aging Effects and Degree of Co-Operativity
Diogo HP, Moura-Ramos JJ
Journal of Polymer Science Part B: Polymer Physics, 47(8), 820, 2009 |
| 3 |
Interconnection of the parameters obtained from thermally stimulated depolarization currents in beta- PbF2 doped with rare Earth ions
Dologlou E
Solid State Ionics, 180(1), 18, 2009 |
| 4 |
Density of states in the gap of microcrystalline silicon determined from thermally-stimulated currents
Souffi N, Bauer GH, Main C, Reynolds S, Bruggemann R
Thin Solid Films, 516(20), 6844, 2008 |
| 5 |
Study of trap states in polyfluorene based devices by using TSC technique
Renaud C, Huang CH, Lee CW, Le Rendu P, Nguyen TP
Thin Solid Films, 516(20), 7209, 2008 |
| 6 |
Relaxation phenomenon of poly(vinyl alcohol)/sodium carboxy methyl cellulose blend by thermally stimulated depolarization currents and thermal sample technique
El-Kader FHA, Shehap AM, Abo-Ellil MS, Mahmoud KH
Journal of Applied Polymer Science, 95(6), 1342, 2005 |
| 7 |
Thermally stimulated currents of poly(methyl methacrylate): Comments on the molecular origin of a debye-type signal between the alpha- and beta-relaxation modes
Kalogeras IM
Journal of Polymer Science Part B: Polymer Physics, 42(4), 702, 2004 |
| 8 |
Analysis of thermally stimulated current and effect of rubbery annealing around glass-rubber transition temperature in polyethylene terephthalate
Benrekaa N, Gourari A, Bendaoud M, Ait-hamouda K
Thermochimica Acta, 413(1-2), 39, 2004 |
| 9 |
Defects, their interaction and modification by irradiation in semi-insulating GaAs
Kazukauskas V, Kuprusevicius E, Vaitkus JV, Smith KM
Materials Science Forum, 384-3, 317, 2002 |
| 10 |
New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures
Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN
Materials Science Forum, 389-3, 1001, 2002 |
