| 1 |
Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells
Matsumoto T, Nakajima H, Irishika D, Nonaka T, Imamura K, Kobayashi H
Applied Surface Science, 395, 56, 2017 |
| 2 |
Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD
Wang XY, Yang XG, Du WN, Ji HM, Luo S, Yang T
Journal of Crystal Growth, 395, 55, 2014 |
| 3 |
Electronic properties of thermally formed thin iron oxide films
Wielant J, Goossens V, Hausbrand R, Terryn H
Electrochimica Acta, 52(27), 7617, 2007 |
| 4 |
Photoelectrochemical analysis on the passive film formed on Ti in pH 8.5 buffer solution
Kim DY, Ahn SJ, Kwon H
Thin Solid Films, 513(1-2), 212, 2006 |
| 5 |
Effects of dislocations on reliability of thermal oxides grown on n-type 4H-SiC wafer
Senzaki J, Kojima K, Kato T, Shimozato A, Fukuda K
Materials Science Forum, 483, 661, 2005 |
| 6 |
A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer
Senzaki J, Goto M, Kojima K, Yamabe K, Fukuda K
Materials Science Forum, 457-460, 1269, 2004 |
| 7 |
Gate oxide with high dielectric breakdown strength after undergoing a typical power MOSFET fabrication process
Tanimoto S, Kiritani N, Hoshi M, Okushi H, Arai K
Materials Science Forum, 433-4, 725, 2002 |
