| 1 |
Analysis of the impedance field of saturated MOSFETs and drain thermal noise
Lee KY
Solid-State Electronics, 130, 63, 2017 |
| 2 |
Crack diffusion in failure process of composite materials
Hader A, Achik I, Sbiaai H, Bakir R, Boughaleb Y
Molecular Crystals and Liquid Crystals, 628(1), 79, 2016 |
| 3 |
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 68, 32, 2012 |
| 4 |
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 72, 8, 2012 |
| 5 |
Macroporous microelectrode arrays for measurements with reduced noise
Urbanova V, Li YL, Vytras K, Yvert B, Kuhn A
Journal of Electroanalytical Chemistry, 656(1-2), 91, 2011 |
| 6 |
Analytical modeling of flicker and thermal noise in n-channel DG FinFETs
Pandit S, Syamal B, Sarkar CK
Solid-State Electronics, 63(1), 177, 2011 |
| 7 |
Modeling short-channel effects in channel thermal noise and induced-gate noise in MOSFETs in the NQS regime
Vallur S, Jindal RP
Solid-State Electronics, 53(1), 36, 2009 |
| 8 |
Modeling non-quasi-static effects in channel thermal noise and induced-gate noise in MOS field-effect transistors
Deshpande A, Jindal RP
Solid-State Electronics, 52(5), 771, 2008 |
| 9 |
An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects
Jeon J, Lee JD, Park BG, Shin H
Solid-State Electronics, 51(7), 1034, 2007 |
| 10 |
Drain current thermal noise modeling for deep submicron n- and p-channel MOSFETs
Han K, Shin H, Lee K
Solid-State Electronics, 48(12), 2255, 2004 |
