검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Solid-phase epitaxial growth of bulk SiC single crystals Pernot E, Anikin M, Pons M, Chaix-Pluchery O, Baillet F, Matko I, Madar R Materials Science Forum, 389-3, 143, 2002 |
| 2 |
Investigation of structural defects during 4H-SiC Schottky diode processing by synchrotron topography Pernot E, Neyret E, Moulin C, Pernot-Rejmankova P, Templier F, Di Cioccio L, Billon T, Madar R Materials Science Forum, 389-3, 419, 2002 |
| 3 |
Structural defects in electrically degraded 4H-SiC PiN diodes Persson POA, Jacobson H, Molina-Aldareguia JM, Bergman JP, Tuomi T, Clegg WJ, Janzen E, Hultman L Materials Science Forum, 389-3, 423, 2002 |
| 4 |
Synchrotron White Beam X-ray Topography and High Resolution Triple Axis X-ray Diffraction studies of defects in SiC substrates, epilayers and devices Dudley M, Huang XR, Vetter WM, Neudeck PG Materials Science Forum, 433-4, 247, 2002 |
| 5 |
Investigation of defects in 4H-SiC by synchrotron topography, Raman spectroscopy imaging and photoluminescence spectroscopy imaging Pernot E, El Harrouni I, Mermoux M, Bluet JM, Anikin M, Chaussende D, Pons M, Madar R Materials Science Forum, 433-4, 265, 2002 |
| 6 |
Doping-related strain in n-doped 4H-SiC crystals Jacobson H, Birch J, Lindefelt U, Hallin C, Henry A, Yakimova R, Janzen E Materials Science Forum, 433-4, 269, 2002 |
| 7 |
Properties of different stacking faults that cause degradation in SiC PiN diodes Jacobson H, Bergman JP, Hallin C, Tuomi T, Janzen E Materials Science Forum, 433-4, 913, 2002 |
| 8 |
High-resolution XRD evaluation of thick 4H-SiC epitaxial layers Jacobsson H, Yakimova R, Syvajarvi M, Birch J, Tuomi T, Janzen E Materials Science Forum, 353-356, 291, 2001 |
| 9 |
Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes Bergman JP, Lendenmann H, Nilsson PA, Lindefelt U, Skytt P Materials Science Forum, 353-356, 299, 2001 |
| 10 |
The growth defects in Czochralski-grown Yb : YAG crystal Yang PZ, Deng PZ, Yin ZW, Tian YL Journal of Crystal Growth, 218(1), 87, 2000 |