검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
A new standard method to calculate electrochromic switching time Hassab S, Shen DE, Osterholm AM, Da Rocha M, Song G, Alesanco Y, Vinuales A, Rougier A, Reynolds JR, Padilla J Solar Energy Materials and Solar Cells, 185, 54, 2018 |
| 2 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system Mun JK, Oh JH, Sung HK, Wang C Solid-State Electronics, 114, 121, 2015 |
| 3 |
Electrochromic Properties of Poly(3,4-ethylenedioxythiophene) Nanocomposite Film Containing SiO2 Nanoparticles Lee JS, Choi YJ, Park HH, Pyun JC Journal of Applied Polymer Science, 122(5), 3080, 2011 |
| 4 |
Dynamic model of AlGaN/GaN HFET for high voltage switching Koudymov A Solid-State Electronics, 56(1), 135, 2011 |
| 5 |
Simulation based performance comparison of transistors designed using standard photolithographic and coarse printing design specifications Wondmagegn WT, Satyala NT, Stiegler HJ, Quevedo-Lopez MA, Forsythe EW, Pieper RJ, Gnade BE Thin Solid Films, 519(6), 1943, 2011 |
| 6 |
Au 나노입자가 함침된 Poly (3, 4-ethylenedioxythiphene) 고분자 박막의 전기변색 특성연구 이종석, 구경회, 박형호 Korean Journal of Materials Research, 19(10), 527, 2009 |
| 7 |
4H-SiC DMOSFETs for high speed switching applications Ryu SH, Krishnaswami S, Das M, Richmond J, Agarwal A, Palmour J, Scofield J Materials Science Forum, 483, 797, 2005 |
| 8 |
Numerical analysis of SiC merged PiN Schottky diodes Ayalew T, Kim SC, Grasser T, Selberherr S Materials Science Forum, 483, 949, 2005 |
| 9 |
Reverse recovery characteristics and defect distribution in an electron-irradiated silicon p-n junction diode Kang SM, Eom TJ, Kim SJ, Kim HW, Cho JY, Lee C Materials Chemistry and Physics, 84(1), 187, 2004 |
| 10 |
Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC Ryu SH, Agarwal A, Richmond J, Das M, Lipkin L, Palmour J, Saks N, Williams J Materials Science Forum, 389-3, 1195, 2002 |