검색결과 : 13건
No. | Article |
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1 |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices Chandrasekaran S, Simanjuntak FM, Aluguri R, Tseng TY Thin Solid Films, 660, 777, 2018 |
2 |
Symmetric tunnel field-effect transistor (S-TFET) Nam H, Cho MH, Shin C Current Applied Physics, 15(2), 71, 2015 |
3 |
The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating Bae SH, Lee S, Koo H, Lin L, Jo BH, Park C, Wang ZL Advanced Materials, 25(36), 5098, 2013 |
4 |
Electrofluorescence switching of fluorescent polymer film Seo S, Shin H, Park C, Lim H, Kim E Macromolecular Research, 21(3), 284, 2013 |
5 |
White Electrofluorescence Switching from Electrochemically Convertible Yellow Fluorescent Dyad Seo S, Kim Y, Zhou Q, Clavier G, Audebert P, Kim E Advanced Functional Materials, 22(17), 3556, 2012 |
6 |
Electrochemical Fluorescence Switching from a Patternable Poly(1,3,4-oxadiazole) Thin Film Seo S, Kim Y, You J, Sarwade BD, Wadgaonkar PP, Menon SK, More AS, Kim E Macromolecular Rapid Communications, 32(8), 637, 2011 |
7 |
The synthesis and property of dihydropyrene derivatives containing a nitrogen atom Chifuku K, Sawada T, Kuwahara Y, Shosenji H Molecular Crystals and Liquid Crystals, 470, 369, 2007 |
8 |
Characteristics of electrochemical transistors Taniguchi M, Kawai T Molecular Crystals and Liquid Crystals, 444, 61, 2006 |
9 |
BIFET - a novel bipolar SiC switch for high voltage power electronics Mitlehner H, Friedrichs P, Elpelt R, Dohnke KO, Schorner R, Stephani D Materials Science Forum, 457-460, 1245, 2004 |
10 |
1700 V SiC Schottky diodes scaled to 25 A Peters D, Dohnke KO, Hecht C, Stephani D Materials Science Forum, 353-356, 675, 2001 |