검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures Liou BW Thin Solid Films, 517(24), 6558, 2009 |
| 2 |
Realizing high voltage SJ-LDMOS with non-uniform N-buried layer Chen WJ, Zhang B, Li ZJ Solid-State Electronics, 52(5), 675, 2008 |
| 3 |
Breaking the theoretical limit of SiC unipolar power device - A simulation study Yu LC, Sheng K Solid-State Electronics, 50(6), 1062, 2006 |
| 4 |
SiC super junction power devices: Modeling and analysis Shen ZJ, Cheng X, Kang B, Ko S, Hshieh I Materials Science Forum, 483, 957, 2005 |
| 5 |
The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages Bauer FD Solid-State Electronics, 48(5), 705, 2004 |
| 6 |
Super-junction device forward characteristics and switched power limitations Adachi K, Johnson CM, Ohashi H, Shinohe T, Kinoshita K, Arai K Materials Science Forum, 389-3, 1251, 2002 |
| 7 |
SiC lateral super-junction diodes fabricated by epitaxial growth Miura M, Nakamura S, Suda J, Kimoto T, Matsunami H Materials Science Forum, 433-4, 859, 2002 |
| 8 |
SiC device limitation breakthrough with novel floating junction structure on 4H-SiC Adachi K, Omura I, Ono R, Nishio J, Shinohe T, Ohashi H, Arai K Materials Science Forum, 433-4, 887, 2002 |
| 9 |
New "silicon limit" of power devices Chen XB, Yang HQ, Cheng M Solid-State Electronics, 46(8), 1185, 2002 |
| 10 |
Comparison of super-junction structures in 4H-SiC and Si for high voltage applications Adachi K, Johnson CM, Ohashi H, Shinohe T, Kinoshita K, Arai K Materials Science Forum, 353-356, 719, 2001 |