검색결과 : 56건
| No. | Article |
|---|---|
| 1 |
A morphology study on the epitaxial growth of graphene and its buffer layer Kruskopf M, Pierz K, Pakdehi DM, Wundrack S, Stosch R, Bakin A, Schumacher HW Thin Solid Films, 659, 7, 2018 |
| 2 |
Effects of source material on epitaxial growth of fluorescent SiC Jokubavicius V, Hens P, Liljedahl R, Sun JW, Kaiser M, Wellmann P, Sano S, Yakimova R, Kamiyama S, Syvajarvi M Thin Solid Films, 522, 7, 2012 |
| 3 |
Growth of AlN single crystalline boules Herro ZG, Zhuang D, Schlesser R, Sitar Z Journal of Crystal Growth, 312(18), 2519, 2010 |
| 4 |
Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z Journal of Crystal Growth, 286(2), 205, 2006 |
| 5 |
Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules Noveski V, Schlesser R, Raghothamachar B, Dudley M, Mahajan S, Beaudoin S, Sitar Z Journal of Crystal Growth, 279(1-2), 13, 2005 |
| 6 |
Growth of large diameter SiC crystals by advanced physical vapor transport Anderson T, Barrett D, Chen J, Emorhokpor E, Gupta A, Hopkins R, Souzis A, Tanner C, Yoganathan M, Zwieback I, Choyke WJ, Devaty RP, Yan F Materials Science Forum, 483, 9, 2005 |
| 7 |
Growth of undoped (vanadium-Free) semi-insulating 6H-SiC single crystals Anderson TA, Barrett DL, Chen J, Emorhokpor E, Gupta A, Hopkins RH, Souzis AE, Tanner CD, Yoganathan M, Zwieback I Materials Science Forum, 483, 35, 2005 |
| 8 |
Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SiC Wagner A, Schulz D, Doerschel J Materials Science Forum, 483, 109, 2005 |
| 9 |
Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals Kato T, Kojima K, Nishizawa SI, Arai K Materials Science Forum, 483, 315, 2005 |
| 10 |
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Sveinbjornsson EO, Olafsson HO, Gudjonsson G, Allerstam F, Nilsson PA, Syvajarvi M, Yakimova R, Hallin C, Rodle T, Jos R Materials Science Forum, 483, 841, 2005 |