| 1 |
Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width
Lee CC, Liu CH, Hsu HW, Hung MH
Thin Solid Films, 557, 311, 2014 |
| 2 |
Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors
Oda K, Okumura T, Tani K, Saito S, Ido T
Thin Solid Films, 557, 355, 2014 |
| 3 |
Simulation-based sensitivity estimation of the geometric effect of poly gates on nanoscale n-type metal-oxide-semiconductor field-effect transistors with silicon-carbon alloy
Lee CC, Liu CH, Teng HH
Thin Solid Films, 570, 336, 2014 |
| 4 |
Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal-Insulator-Semiconductor Field-Effect Transistors with SiGe stressors
Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T
Thin Solid Films, 520(8), 3236, 2012 |
| 5 |
Integration of MOSFETs with SiGe dots as stressor material
Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E
Solid-State Electronics, 60(1), 75, 2011 |
| 6 |
Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs
Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T
Solid-State Electronics, 60(1), 89, 2011 |
| 7 |
Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys
Bauer M, Thomas SG
Thin Solid Films, 518, S200, 2010 |
| 8 |
Analysis of silicon germanium vapor phase epitaxy kinetics
Tomasini P, Machkaoutsan V, Thomas SG
Thin Solid Films, 518, S12, 2010 |
| 9 |
Stability of silicon germanium stressors
Tomasini P, Machkaoutsan V, Thomas SG, Loo R, Caymax M, Verheyen P
Thin Solid Films, 518, S133, 2010 |
| 10 |
Strained Si channel NMOSFETs using a stress field with Si1-yCy source and drain stressors
Chang ST, Tasi HS, Kung C
Thin Solid Films, 508(1-2), 333, 2006 |
