검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G Applied Surface Science, 234(1-4), 240, 2004 |
| 2 |
Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces Lucovsky G, Niimi H, Wu Y, Yang H Applied Surface Science, 159, 50, 2000 |
| 3 |
Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics Lucovsky G, Yang HY, Wu Y, Niimi H Thin Solid Films, 374(2), 217, 2000 |