1 |
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Lee YM, Wu YD, Bae C, Hong JG, Lucovsky G Solid-State Electronics, 47(1), 71, 2003 |
2 |
Low frequency current noise in 2.5 nm MOSFET and fractal dimension of soft breakdown Huo ZL, Mao LF, Xu MZ, Tan CH Solid-State Electronics, 47(9), 1451, 2003 |
3 |
Soft breakdown current noise in ultra-thin gate oxides Cester A, Bandiera L, Ghidini G, Bloom I, Paccagnella A Solid-State Electronics, 46(7), 1019, 2002 |
4 |
Evolution from soft to hard breakdown in thin gate oxides: effect of oxide thickness, capacitor area and stress current Cacciato A, Evseev S, Valk H Solid-State Electronics, 45(8), 1339, 2001 |
5 |
Experimental evaluation of device degradation subject to oxide soft breakdown Zhang J, Yuan JS, Ma Y, Chen Y, Oates AS Solid-State Electronics, 45(9), 1521, 2001 |
6 |
Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing Huang CH, Hwu JG Solid-State Electronics, 44(8), 1405, 2000 |