화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
Lee YM, Wu YD, Bae C, Hong JG, Lucovsky G
Solid-State Electronics, 47(1), 71, 2003
2 Low frequency current noise in 2.5 nm MOSFET and fractal dimension of soft breakdown
Huo ZL, Mao LF, Xu MZ, Tan CH
Solid-State Electronics, 47(9), 1451, 2003
3 Soft breakdown current noise in ultra-thin gate oxides
Cester A, Bandiera L, Ghidini G, Bloom I, Paccagnella A
Solid-State Electronics, 46(7), 1019, 2002
4 Evolution from soft to hard breakdown in thin gate oxides: effect of oxide thickness, capacitor area and stress current
Cacciato A, Evseev S, Valk H
Solid-State Electronics, 45(8), 1339, 2001
5 Experimental evaluation of device degradation subject to oxide soft breakdown
Zhang J, Yuan JS, Ma Y, Chen Y, Oates AS
Solid-State Electronics, 45(9), 1521, 2001
6 Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing
Huang CH, Hwu JG
Solid-State Electronics, 44(8), 1405, 2000