| 1 |
Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy
Thiru S, Asakawa M, Honda K, Kawaharazuka A, Tackeuchi A, Makimoto T, Horikoshi Y
Journal of Crystal Growth, 425, 203, 2015 |
| 2 |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy
Lai FI, Kuo SY, Wang JS, Hsiao RS, Kuo HC, Chi J, Wang SC, Wang HS, Liang CT, Chen YF
Journal of Crystal Growth, 291(1), 27, 2006 |
| 3 |
Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers
Kasai J, Mozume T
Journal of Crystal Growth, 278(1-4), 183, 2005 |
| 4 |
Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well
Lu J, Shen B, Tang N, Chen DJ, Zheng YD
Materials Science Forum, 475-479, 1787, 2005 |
| 5 |
Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE
Ouchi K, Mishima T
Journal of Crystal Growth, 209(2-3), 242, 2000 |
| 6 |
Pressure effect on the exchange interaction in the interface region of a CdTe/CdMnTe quantum-well structure
Yokoi H, Tozer S, Kim Y, Takeyama S, Wojtowicz T, Karczewski G, Kossut J
Journal of Crystal Growth, 214, 428, 2000 |
| 7 |
Biexcitons in CdMnTe/CdTe/CdMgTe single quantum well
Adachi S, Takagi Y, Takeyama S
Journal of Crystal Growth, 214, 819, 2000 |
| 8 |
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
Lu LW, Zhang YH, Xu ZT, Xu ZY, Wang ZG, Wang J, Ge WK
Journal of Crystal Growth, 218(1), 13, 2000 |
