검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
A new compact analytical model of single electron transistor for hybrid SET-MOS circuits Jain A, Nameriakpam BS, Sarkar SK Solid-State Electronics, 104, 90, 2015 |
| 2 |
Single Electron Transistor in Aqueous Media Yu CC, Lee SW, Ong J, Moore D, Saraf RF Advanced Materials, 25(22), 3079, 2013 |
| 3 |
Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: to Single Electron Transistor Deshpande V, Barraud S, Jehl X, Wacquez R, Vinet M, Coquand R, Roche B, Voisin B, Triozon F, Vizioz C, Tosti L, Previtali B, Perreau P, Poiroux T, Sanquer M, Faynot O Solid-State Electronics, 84, 179, 2013 |
| 4 |
Field-emission-induced electromigration method for the integration of single-electron transistors Ueno S, Tomoda Y, Kume W, Hanada M, Takiya K, Shirakashi J Applied Surface Science, 258(6), 2153, 2012 |
| 5 |
Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor Horiguchi S, Fujiwara A Thin Solid Films, 520(8), 3349, 2012 |
| 6 |
Current conduction models in the high temperature single-electron transistor Dubuc C, Beaumont A, Beauvais J, Drouin D Solid-State Electronics, 53(5), 478, 2009 |
| 7 |
Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices Carneiro VGA, Guimaraes JG, da Costa JC Applied Surface Science, 255(3), 715, 2008 |
| 8 |
Capacitance measurements in nanometric silicon devices using Coulomb blockade Hofheinz M, Jehl X, Sanquer M, Cueto O, Molas G, Vinet M, Deleonibus S Solid-State Electronics, 51(4), 560, 2007 |
| 9 |
Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications Uchida K, Tanamoto T, Fujita S Solid-State Electronics, 51(11-12), 1552, 2007 |
| 10 |
Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors Khalafalla MAH, Durrani ZAK, Mizuta H, Ahmed H, Oda S Thin Solid Films, 487(1-2), 255, 2005 |