검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si Novkovski N, Atanassova E Thin Solid Films, 519(7), 2262, 2011 |
| 2 |
Germanium and Silicon: A Comparative Study of Hydrogenated Interstitial and Vacancy Defects by IR Spectroscopy Rochat N, Tauzin A, Mazen F, Clavelier L Electrochemical and Solid State Letters, 13(5), G40, 2010 |
| 3 |
XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation Wong H, Iwai H, Kakushima K, Yang BL, Chu PK Journal of the Electrochemical Society, 157(2), G49, 2010 |
| 4 |
Further investigation of silicon vacancy-related luminescence in 4H and 6H SiC Steeds JW, Furkert S, Hayes JM, Sullivan W Materials Science Forum, 457-460, 561, 2004 |
| 5 |
Defect studies in semiconductors Fujinami M, Sawada T, Akahane T Materials Science Forum, 363-3, 52, 2001 |
| 6 |
Defect physics investigations using positron and ion beams Simpson PJ, Szpala S, Knights AP Materials Science Forum, 363-3, 56, 2001 |