화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 An effective thermal circuit model for electro-thermal simulation of SOI analog circuits
Cheng MC, Zhang K
Solid-State Electronics, 62(1), 48, 2011
2 Silicon on insulator MESFETs for RF amplifiers
Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ
Solid-State Electronics, 54(3), 336, 2010
3 Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)
Baudot S, Andrieu F, Faynot O, Eymery J
Solid-State Electronics, 54(9), 861, 2010
4 Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs
Barrett C, Lederer D, Redmond G, Xiong W, Colinge JP, Quinn AJ
Solid-State Electronics, 54(11), 1273, 2010
5 Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors
Ruddell FH, Suder SL, Bain MF, Montgomery JH, Armstrong BM, Gamble HS, Denvir D, Casse G, Bowcock T, Allport PP, Marczewski J, Kucharski K, Tomaszewski D, Niemiec H, Kucewicz W
Solid-State Electronics, 52(12), 1849, 2008
6 Analysis of STI-induced mechanical stress-related Kink effect of 40 nm PD SOI NMOS devices biased in saturation region
Lin IS, Su VC, Kuo JB, Chen D, Yeh CS, Tsai CT, Ma M
Solid-State Electronics, 52(12), 1884, 2008
7 Substrate bias and operating temperature effects on the performance of Schottky-barrier SOI nMOSFETs
Ka DH, Shin JW, Cho WJ, Park JT
Solid-State Electronics, 52(12), 1910, 2008
8 Bulk and surface micromachined MEMS in thin film SOI technology
Raskin JP, Iker F, Andre N, Olbrechts B, Pardoen T, Flandre D
Electrochimica Acta, 52(8), 2850, 2007
9 Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOICMOS transistors
Ioannou DP, Ioannou DE
Solid-State Electronics, 51(2), 268, 2007
10 Dose radiation effects in FinFETs
Wu XS, Chan PCH, Orozco A, Vazquez A, Chaudhry A, Colinge JP
Solid-State Electronics, 50(2), 287, 2006