화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Hard and relaxed a-SiNxHy films prepared by PECVD: Structure analysis and formation mechanism
Xu XD, He Q, Fan TJ, Jiang YD, Huang L, Ao TH, Ma CQ
Applied Surface Science, 264, 823, 2013
2 Plasma etching of virtually stress-free stacked silicon nitride films
Mikolajunas M, Baltrusaitis J, Kopustinskas V, Vanagas G, Grigaliunas V, Virzonis D
Thin Solid Films, 517(19), 5769, 2009
3 Properties of plasma enhanced chemical vapor deposited silicon nitride for the application in multicrystalline silicon solar cells
Yoo J, Dhungel SK, Yi J
Thin Solid Films, 515(12), 5000, 2007
4 Effect of showerhead configuration on coherent Raman spectroscopically monitored pulsed radio frequency plasma enhanced chemical vapor deposited silicon nitride thin films
Phillips B, Rodriguez RG, Lau LD, Steidley SD
Plasma Chemistry and Plasma Processing, 24(2), 307, 2004
5 High-density inductively coupled plasma chemical vapor deposition of silicon nitride for solar cell application
Parm IO, Kim K, Lim DG, Lee JH, Heo JH, Kim J, Kim DS, Lee SH, Yi J
Solar Energy Materials and Solar Cells, 74(1-4), 97, 2002
6 High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate
Sakai M, Tsutsumi T, Yoshioka T, Masuda A, Matsumura H
Thin Solid Films, 395(1-2), 330, 2001
7 Preparation of a-SiNx thin film with low hydrogen content by inductively coupled plasma enhanced chemical vapor deposition
Han SS, Jun BH, No K, Bae BS
Journal of the Electrochemical Society, 145(2), 652, 1998
8 Residual stress in low pressure chemical vapor deposition SiNx films deposited from silane and ammonia
Temple-Boyer P, Rossi C, Saint-Etienne E, Scheid E
Journal of Vacuum Science & Technology A, 16(4), 2003, 1998
9 Low temperature deposition of SiNx : H using SiH4-N-2 or SiH4-NH3 distributed electron cyclotron resonance microwave plasma
Delmotte F, Hugon MC, Agius B, Courant JL
Journal of Vacuum Science & Technology B, 15(6), 1919, 1997
10 Elaboration and Study of an Elastic Hard Si-Based Coating Obtained at Room-Temperature from a Far Cold Remote Nitrogen Plasma
Baclez E, Mutel B, Dessaux O, Goudmand P, Grimblot J, Gengembre L
Thin Solid Films, 303(1-2), 156, 1997