| 1 |
Film materials based on a-SiNx:H with high refractive index obtained by plasma enhanced chemical vapour deposition technology
Jaglarz J, Jurzecka-Szymacha M, Kluska S
Thin Solid Films, 669, 564, 2019 |
| 2 |
Excellent surface passivation of heavily doped p(+) silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application
Duttagupta S, Ma FJ, Hoex B, Aberle AG
Solar Energy Materials and Solar Cells, 120, 204, 2014 |
| 3 |
Characterization and Adhesion of Interacting Surfaces in Capacitive RF MEMS Switches Undergoing Cycling
Yeo SM, Polycarpou AA, Tseregounis SI, Tavassolian N, Papapolymerou J
Journal of Adhesion Science and Technology, 24(15-16), 2617, 2010 |
| 4 |
Deposition of silicon nitride thin films by hot-wire CVD at 100 degrees C and 250 degrees C
Alpuim P, Goncalves LM, Marins ES, Viseu TMR, Ferdov S, Bouree JE
Thin Solid Films, 517(12), 3503, 2009 |
| 5 |
Characterization of SiNx/a-Si : H crystalline silicon surface passivation under UV light exposure
Tucci M, Serenelli L, De Lullis S, Izzi M
Thin Solid Films, 515(19), 7625, 2007 |
| 6 |
Conductivity and dielectric properties of silicon nitride thin films prepared by RF magnetron sputtering using nitrogen gas
Awan SA, Gould RD
Thin Solid Films, 423(2), 267, 2003 |
| 7 |
Dielectric properties of RF-sputtered silicon nitride thin films with gold electrodes
Gould RD, Awan SA
Thin Solid Films, 433(1-2), 309, 2003 |
