검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method Dubois C, Prudon G, Gautier B, Dupuy JC Applied Surface Science, 255(4), 1377, 2008 |
| 2 |
Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approach Ferrari S, Perego A, Fanciulli A Applied Surface Science, 203, 52, 2003 |