검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Novel pathways for elimination of chlorine atoms from growing Si(100) surfaces in CVD reactors Kunioshi N, Hagino S, Fuwa A, Yamaguchi K Applied Surface Science, 441, 773, 2018 |
| 2 |
Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates Asano T, Terashima T, Yamaha T, Kurosawa M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S Solid-State Electronics, 110, 49, 2015 |
| 3 |
Formation mechanism of local thickness profile of silicon epitaxial film Habuka H, Fukaya S, Sawada A, Takeuchi T, Aihara M Journal of Crystal Growth, 266(1-3), 327, 2004 |
| 4 |
Numerical simulation of silicon epitaxial growth in a single-wafer CVD reactor Yasuhiro S, Shin YS, Imaishi N, Akiyama Y KAGAKU KOGAKU RONBUNSHU, 30(1), 22, 2004 |
| 5 |
Nickel-enhanced low-temperature epitaxial growth of silicon Uchida Y, Katsumata N, Ishida K Thin Solid Films, 427(1-2), 294, 2003 |
| 6 |
Model of boron incorporation into silicon epitaxial film in a B2H6-SiHCl3-H-2 system Habuka H, Otsuka T, Qu WF, Shimada M, Okuyama K Journal of Crystal Growth, 222(1-2), 183, 2001 |
| 7 |
Instability of diborane gas in silicon epitaxial film growth Habuka H, Akiyama S, Otsuka T, Qu WF Journal of Crystal Growth, 209(4), 807, 2000 |
| 8 |
Remote Plasma-Enhanced Chemical-Vapor-Deposition of Silicon Films at Low-Temperatures from Si2H6-H-2-Sif4 Kim DH, Park YB, Lee IJ, Rhee SW Journal of the Electrochemical Society, 143(8), 2640, 1996 |
| 9 |
Growth of SiC Films on Si(100) by Electron-Cyclotron-Resonance Chemical-Vapor-Deposition Using SiH4/CH4/H-2 Liu CC, Lee CP, Cheng KL, Cheng HC, Yew TR Journal of the Electrochemical Society, 142(12), 4279, 1995 |