검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers Prieto F, Marco JF, Prieto JE, Ruiz-Gomez S, Perez L, del Real RP, Vazquez M, de la Figuera J Applied Surface Science, 436, 1067, 2018 |
| 2 |
PC1Dmod 6.1-state-of-the-art models in a well-known interface for improved simulation of Si solar cells Haug H, Greulich J, Kimmerle A, Marstein ES Solar Energy Materials and Solar Cells, 142, 47, 2015 |
| 3 |
Implementation of Fermi-Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells Haug H, Kimmerle A, Greulich J, Wolf A, Marstein ES Solar Energy Materials and Solar Cells, 131, 30, 2014 |
| 4 |
Continuous hot-wire chemical vapor deposition on moving glass substrates Bink A, Brinza M, Jongen JPH, Schropp REI Thin Solid Films, 517(12), 3588, 2009 |
| 5 |
How lifetime fluctuations, grain-boundary recombination, and junctions affect lifetime measurements and their correlation to silicon solar cell performance Metzger WK Solar Energy Materials and Solar Cells, 92(9), 1123, 2008 |
| 6 |
The Si-Tag for immobilizing proteins on a silica surface Taniguchi K, Nomura K, Hata Y, Nishimura T, Ksami Y, Kuroda A Biotechnology and Bioengineering, 96(6), 1023, 2007 |
| 7 |
Monolithic bidirectional switch. I. Device concept Sittig R, Heinke F Solid-State Electronics, 44(8), 1387, 2000 |
| 8 |
Field emission characteristics of SiC capped Si tip array by ion beam synthesis Chen DH, Cheung WY, Wong SP, Fung YM, Xu JB, Wilson IH, Kwok RWM Journal of Vacuum Science & Technology A, 17(4), 2109, 1999 |
| 9 |
Fabrication technology of ultrafine SiO2 masks and Si nanowires using oxidation of vertical sidewalls of a poly-Si layer Tsutsumi T, Tomizawa K, Ishii K, Kanemaru S, Maeda T, Suzuki E Journal of Vacuum Science & Technology B, 17(1), 77, 1999 |
| 10 |
Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators Dimitrakopoulos CD, Purushothaman S, Kymissis J, Callegari A, Shaw JM Science, 283(5403), 822, 1999 |