검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si : C : N films Blaszczyk-Lezak I, Wrobel AM, Kivitorma MPM, Vayrynen U, Tracz A Applied Surface Science, 253(17), 7211, 2007 |
| 2 |
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films Blaszczyk-Lezak I, Wrobel AM, Aoki T, Nakanishi Y, Kucinska I, Tracz A Thin Solid Films, 497(1-2), 24, 2006 |
| 3 |
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films Blaszczyk-Lezak I, Wrobel AM, Bielinski DM Thin Solid Films, 497(1-2), 35, 2006 |