| 1 |
Removal of surface states on Si(100) by valence-mending passivation
Tao M
Applied Surface Science, 462, 8, 2018 |
| 2 |
Growth of ZnO thin film on graphene transferred Si (100) substrate
Lee A, Kim G, Yoo SJ, Cho IS, Seo H, Ahn B, Yu HK
Thin Solid Films, 619, 68, 2016 |
| 3 |
Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon
Catena A, McJunkin T, Agnello S, Gelardi FM, Wehner S, Fischer CB
Applied Surface Science, 347, 657, 2015 |
| 4 |
Study on the growth mechanism of tin-doped indium oxide films deposited by direct current pulse magnetron sputtering
Wang HL, Liu HL, Ding WY, Chai WP
Thin Solid Films, 542, 415, 2013 |
| 5 |
The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study
Nolph CA, Vescovo E, Reinke P
Applied Surface Science, 255(17), 7642, 2009 |
| 6 |
Electroless deposition of Ag onto p-Si(100) surface under the condition of the centrifugal fields
Tong H, Kong LB, Wang CM
Thin Solid Films, 496(2), 360, 2006 |
| 7 |
Electroless silver deposition on Si(100) substrate based on the seed layer of silver itself
Tong H, Zhu L, Li MN, Wang CM
Electrochimica Acta, 48(17), 2473, 2003 |
| 8 |
Electrochemical modifications at the nanometer scale on Si(100) surfaces with scanning tunnelling microscopy
Abadal G, Perez-Murano F, Barniol N, Aymerich X
Thin Solid Films, 317(1-2), 493, 1998 |
| 9 |
Nanometer-Scale Surface Modification Using the Scanning Probe Microscope - Progress Since 1991
Nyffenegger RM, Penner RM
Chemical Reviews, 97(4), 1195, 1997 |
| 10 |
Initial Growth-Processes in the Epitaxy of Ge and GeH4 on Oxidized Si Substrates
Angermeier D, Kuhn WS, Druihle R, Ballutaud D, Triboulet R
Journal of the Electrochemical Society, 144(2), 694, 1997 |
