검색결과 : 1건
No. | Article |
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1 |
High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching Saddow SE, Williams J, Isaacs-Smith T, Capano MA, Cooper JA, Mazzola MS, Hsieh AJ, Casady JB Materials Science Forum, 338-3, 901, 2000 |