1 |
Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors Chien ND, Vinh LT, Tham HTH, Shih CH Current Applied Physics, 20(12), 1342, 2020 |
2 |
Half-Corbino short-channel amorphous In-Ga-Zn-O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers Zhao CM, Fung TC, Kanicki J Solid-State Electronics, 120, 25, 2016 |
3 |
Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET Anvarifard MK, Orouji AA Solid-State Electronics, 103, 154, 2015 |
4 |
Short channel amorphous In-Ga-Zn-O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability Kim SC, Kim YS, Yu EKH, Kanicki J Solid-State Electronics, 111, 67, 2015 |
5 |
Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel Burignat S, Flandre D, Arshad MKM, Kilchytska V, Andrieu F, Faynot O, Raskin JP Solid-State Electronics, 54(2), 213, 2010 |
6 |
Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs Jit S, Pandey PK, Tiwari PK Solid-State Electronics, 53(1), 57, 2009 |
7 |
Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation Hakim MMA, Tan L, Buiu O, Redman-White W, Hall S, Ashburn P Solid-State Electronics, 53(7), 753, 2009 |
8 |
Short channel effect improved strained-Si : C-source/drain PMOSFETs Lee MH, Chang ST, Maikap S, Shen KW, Wang WC Applied Surface Science, 254(19), 6144, 2008 |
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0.1 μm SOI-MOSFET의 적정 채널도핑농도에 관한 시뮬레이션 연구 최광수 Korean Journal of Materials Research, 18(5), 272, 2008 |
10 |
Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics Fregonese S, Zhuang Y, Burghartz JN Solid-State Electronics, 52(6), 919, 2008 |