검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Damage and annealing recovery of boron-implanted ultra-shallow junction: The correlation between beam current and surface configuration Chang FM, Wu ZZ, Lin YF, Kao LC, Wu CT, JangJian SK, Chen YN, Lo KY Applied Surface Science, 433, 160, 2018 |
| 2 |
A study on NiGe-contacted Ge n(+)/p Ge shallow junction prepared by dopant segregation technique Tsui BY, Shih JJ, Lin HC, Lin CY Solid-State Electronics, 107, 40, 2015 |
| 3 |
Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon Liang JH, Wu CH Applied Surface Science, 310, 230, 2014 |
| 4 |
Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies Chang HY, Chopra S, Adams B, Li JP, Sharma S, Kim Y, Moffatt S, Woo JCS Solid-State Electronics, 80, 59, 2013 |
| 5 |
Study of ultra-shallow p(+)n junctions formed by excimer laser annealing Juang MH, Lu CN, Jang SL, Cheng HC Materials Chemistry and Physics, 123(1), 260, 2010 |
| 6 |
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology Nguyen ND, Rosseel E, Takeuchi S, Everaert JL, Yang L, Goossens J, Moussa A, Clarysse T, Richard O, Bender H, Zaima S, Sakai A, Loo R, Lin JC, Vandervorst W, Caymax M Thin Solid Films, 518, S48, 2010 |
| 7 |
Effect of Si and He implantation in the formation of ultra shallow junctions in Si Xu M, Regula G, Daineche R, Oliviero E, Hakim B, Ntsoenzok E, Pichaud B Thin Solid Films, 518(9), 2354, 2010 |
| 8 |
Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 degrees C by rf-PECVD Labrune M, Moreno M, Cabarrocas PRI Thin Solid Films, 518(9), 2528, 2010 |
| 9 |
Formation of As enriched layer by steam oxidation of As+-implanted Si Baghizadeh A, Agha-Aligol D, Fathy D, Lamehi-Rachti M, Moradi M Applied Surface Science, 255(11), 5857, 2009 |
| 10 |
Transient activation model for antimony in relaxed and strained silicon Lai Y, Bennett NS, Ahn C, Cowern NEB, Cordero N, Greer JC Solid-State Electronics, 53(11), 1173, 2009 |