검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials Jutarosaga T, Manne S, Seraphin S Applied Surface Science, 250(1-4), 168, 2005 |
| 2 |
Infrared spectroscopy of Si-O bonding in low-dose low-energy separation by implanted oxygen materials Jutarosaga T, Jeoung JS, Seraphin S Thin Solid Films, 476(2), 303, 2005 |
| 3 |
Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology Sugiyama N, Mizuno T, Takagi S, Koike M, Kurobe A Thin Solid Films, 369(1-2), 199, 2000 |
| 4 |
Factors limiting the composition window for fabrication of SiGe-on-insulator substrate by low-energy oxygen implantation Ishikawa Y, Shibata N, Fukatsu S Thin Solid Films, 369(1-2), 213, 2000 |