검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
A mechanism for asymmetric data writing failure Lee MJ, Park KW Solid-State Electronics, 56(1), 211, 2011 |
| 2 |
A sensing circuit for MRAM based on 2MTJ-2T structure Jang EJ, Lee SY, Kim HJ, Shin H, Lee S, Kim D Current Applied Physics, 4(1), 19, 2004 |
| 3 |
A 1.8 V 128; Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier Chun KC, Sim JY, Yoon H, Lee HS, Hong SP, Lee KC, Yoo JH, Seo DI Current Applied Physics, 4(1), 25, 2004 |
| 4 |
A delay model for DRAM bit lines with step and ramp word line signals Lin HC, Sha CH, Wong SC Solid-State Electronics, 46(1), 145, 2002 |