| 1 |
Growth of thin zirconium and zirconium oxides films on the n-GaN(0001) surface studied by XPS and LEED
Idczak K, Mazur P, Zuber S, Markowski L, Skiscim M, Bilinska S
Applied Surface Science, 304, 29, 2014 |
| 2 |
Ambipolar-Type Organic Field-Effect Transistor with Two Stacked Active Layers in Dual-Gate Configuration
Lee G, Kim MH, Noh SP, Keum CM, Lee SD
Molecular Crystals and Liquid Crystals, 597(1), 8, 2014 |
| 3 |
Growth of thin zirconium oxide films on the 6H-SiC(0001) surface
Idczak K, Mazur P, Markowski L, Skiscim M, Musial M
Applied Surface Science, 258(21), 8349, 2012 |
| 4 |
Importance of semiconductor/insulator interface for improving transistor properties of OFET
Yoshida M, Uemura S, Hoshino S, Kodzasa T, Kamata T
Molecular Crystals and Liquid Crystals, 455, 327, 2006 |
| 5 |
XPS analysis of carrier trapping phenomena in ultrathin SiO2 film formed on Si substrate
Hirose K, Kawashiri S, Hattori I
Applied Surface Science, 234(1-4), 202, 2004 |
| 6 |
Application of XPS time-dependent measurement to the analysis of charge trapping phenomena in HfAlOx films
Hirose K, Yamawaki M, Torii K, Kawahara T, Kawashiri S, Hattori T
Applied Surface Science, 237(1-4), 411, 2004 |
| 7 |
Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices
Lucovsky G, Raynor GB, Zhang Y, Fulton CC, Nemanich RJ, Appel G, Ade H, Whitten JL
Applied Surface Science, 212, 563, 2003 |
| 8 |
Oxide formation and passivation for micro- and nano-electronic devices
Bae C, Lucovsky G
Applied Surface Science, 212, 644, 2003 |
| 9 |
The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system
Parm IO, Roh Y, Hong B, Park CS, Yi JS
Applied Surface Science, 172(3-4), 295, 2001 |
