검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices Bae C, Lucovsky G Applied Surface Science, 234(1-4), 475, 2004 |
| 2 |
Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics Lucovsky G, Yang HY, Wu Y, Niimi H Thin Solid Films, 374(2), 217, 2000 |