검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Polarization-induced two-dimensional electron gas at Zn1-xMgxO/ZnO heterointerface Yano M, Hashimoto K, Fujimoto K, Koike K, Sasa S, Inoue M, Uetsuji Y, Ohnishi T, Inaba K Journal of Crystal Growth, 301, 353, 2007 |
| 2 |
Temperature dependence of threading dislocation density in In0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy Takano Y, Kobayashi K, Shirakata S, Umezawa M, Fuke S Journal of Crystal Growth, 282(1-2), 36, 2005 |
| 3 |
Properties of metamorphic materials and device structures on GaAs substrates Hoke WE, Kennedy TD, Torabi A, Whelan CS, Marsh PF, Leoni RE, Lardizabal SM, Zhang Y, Jang JH, Adesida I, Xu C, Hsieh KC Journal of Crystal Growth, 251(1-4), 804, 2003 |
| 4 |
Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications Mayer B, Reithmaier JP, Forchel A Journal of Crystal Growth, 227, 298, 2001 |
| 5 |
Sodium induced secondary phase segregations in CuGaSe2 thin films Nadenau V, Lippold G, Rau U, Schock HW Journal of Crystal Growth, 233(1-2), 13, 2001 |