검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer Monteagudo-Lerma L, Valdueza-Felip S, Nunez-Cascajero A, Ruiz A, Gonzalez-Herraez M, Monroy E, Naranjo FB Journal of Crystal Growth, 434, 13, 2016 |
| 2 |
Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy Yodo T, Shimada T, Tagawa S, Harada Y Journal of Crystal Growth, 301, 504, 2007 |
| 3 |
The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy Wu CL, Shen CH, Chen HY, Tsai SJ, Lin HW, Lee HM, Gwo S, Chuang TF, Chang HS, Hsu TM Journal of Crystal Growth, 288(2), 247, 2006 |