검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Effect of applied strain on the interaction between hydrogen atoms and 1/2 < 111 > screw dislocations in alpha-iron Simpson EL, Paxton AT International Journal of Hydrogen Energy, 45(38), 20069, 2020 |
| 2 |
Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors Rathkanthiwar S, Kaira A, Muralidharan R, Nath DN, Raghavan S Journal of Crystal Growth, 498, 35, 2018 |
| 3 |
Steering a crystallization process to reduce crystal polydispersity; case study of insulin crystallization Nanev CN, Petrov KP Journal of Crystal Growth, 480, 164, 2017 |
| 4 |
How do defects transform at the Smectic A-Nematic phase transition? Meyer C, Kleman M Molecular Crystals and Liquid Crystals, 437, 1355, 2005 |
| 5 |
Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers Neudeck PG, Powell JA, Trunek AJ, Spry DJ Materials Science Forum, 457-460, 169, 2004 |
| 6 |
4H-SiC Power Schottky diodes. On the way to solve size limiting issues Syrkin A, Dmitriev V, Soukhoveev V, Mynbaeva M, Kakanakov R, Hallin C, Janzen E Materials Science Forum, 457-460, 985, 2004 |
| 7 |
Role of microscopic defects in the plasticity of lamellar materials Blanc C, Zuodar N, Martin JL, Lelidis I, Kleman M Molecular Crystals and Liquid Crystals, 412, 1695, 2004 |
| 8 |
Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography Dudley M, Vetter WM, Huang XR, Neudeck PG, Powell JA Materials Science Forum, 389-3, 391, 2002 |
| 9 |
A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers Ha S, Vetter WM, Dudley M, Skowronski M Materials Science Forum, 389-3, 443, 2002 |
| 10 |
Replication of defects from 4H-SiC wafer to epitaxial layer Ohno T, Yamaguchi H, Kojima K, Nishio J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Yoshida S Materials Science Forum, 389-3, 447, 2002 |