| 1 |
The external electric-field-induced Schottky-to-ohmic contact transition in graphene/As2S3 interface: A study by the first principles
Liu XF, Zhang ZC, Lv B, Ding Z, Luo ZJ
International Journal of Energy Research, 45(3), 4727, 2021 |
| 2 |
Effect of atomic passivation at Ni-MoS2 interfaces on contact behaviors
Kim J, Choi CG, Min KA, Cho K, Hong S
Current Applied Physics, 20(1), 132, 2020 |
| 3 |
Laser-induced interfacial state changes enable tuning of the Schottky-barrier height in SiC
Lin ZY, Ji LF, Wu Y, Hu LT, Yan TY, Sun ZY
Applied Surface Science, 469, 68, 2019 |
| 4 |
Interface analysis of TiN/n-GaN Ohmic contacts with high thermal stability
Zhu YF, Huang R, Li ZC, Hao H, An YX, Liu T, Zhao YF, Shen Y, Guo Y, Li FS, Ding SN
Applied Surface Science, 481, 1148, 2019 |
| 5 |
Electrical metal contacts to atomically thin 2H-phase MoTe2 grown by metal-organic chemical vapor deposition
Kim T, Joung D, Park J
Current Applied Physics, 18(7), 843, 2018 |
| 6 |
Electrical metal contacts to atomically thin 2H-phase MoTe2 grown by metal-organic chemical vapor deposition
Kim T, Joung D, Park J
Current Applied Physics, 18(7), 843, 2018 |
| 7 |
Electrical metal contacts to atomically thin 2H-phase MoTe2 grown by metal-organic chemical vapor deposition
Kim T, Joung D, Park J
Current Applied Physics, 18(7), 843, 2018 |
| 8 |
Narrowing of band gap at source/drain contact scheme of nanoscale InAs-nMOS
Mohamed AH, Oxland R, Aldegunde M, Hepplestone SP, Sushko PV, Kalna K
Solid-State Electronics, 142, 31, 2018 |
| 9 |
Metal-semiconductor-metal ultraviolet photodiodes based on reduced graphene oxide/GaN Schottky contacts
Pandit B, Cho J
Thin Solid Films, 660, 824, 2018 |
| 10 |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 x 4 interface: An in-situ synchrotron radiation photoemission study
Cheng CP, Chen WS, Lin KY, Wei GJ, Cheng YT, Lin YH, Wan HW, Pi TW, Tung RT, Kwo J, Hong MW
Applied Surface Science, 393, 294, 2017 |
