검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers Sanchez-Almazan F, Napolitani E, Carnera A, Drigo AV, Isella G, von Kanel H, Berti M Applied Surface Science, 231-2, 704, 2004 |
| 2 |
A growth method to obtain flat and relaxed In0.2Ga0.8As on GaAs (001) developed through in situ monitoring of surface topography and stress evolution Gonzalez MU, Gonzalez Y, Gonzalez L, Calleja M, Silveira JP, Garcia JM, Briones F Journal of Crystal Growth, 227, 36, 2001 |
| 3 |
Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers Yousif MYA, Nur O, Willander M, Patel CJ, Hernandez C, Campidelli Y, Bensahel D, Kyutt RN Solid-State Electronics, 45(11), 1869, 2001 |