검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing Chen PS, Lee SW, Lee MH, Liu CW Applied Surface Science, 254(19), 6076, 2008 |
| 2 |
Crystallinity and strain control growth of SiGe using ion sputtering technique Sasaki K, Yoshimori K Thin Solid Films, 508(1-2), 124, 2006 |
| 3 |
Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation Di ZF, Huang AP, Chu PK, Zhang M, Liu WL, Song ZT, Luo SH, Lin CL Journal of Crystal Growth, 281(2-4), 275, 2005 |
| 4 |
Fabrication of epitaxial SiGe optical waveguide structures Kim YW, Berlin D, Samoilov A Applied Surface Science, 224(1-4), 175, 2004 |
| 5 |
Relaxation mechanism of low temperature SiGe/Si(001) buffer layers Vescan L, Wickenhauser S Solid-State Electronics, 48(8), 1279, 2004 |
| 6 |
Determination of band offsets in strained-Si heterolayers Maiti C, Samanta SK, Chatterjee S, Dalapati GK, Bhattacharya S, Armstrong BM, Gamble HS, McCarthy J, Perova TS, Moore RA Thin Solid Films, 462-63, 80, 2004 |
| 7 |
N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD Tan CS, Choi WK, Bera LK, Pey KL, Antoniadis DA, Fitzgerald EA, Currie MT, Maiti CK Solid-State Electronics, 45(11), 1945, 2001 |
| 8 |
Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation Kuchenbecker J, Kibbel H, Muthsam P, Konig U Thin Solid Films, 389(1-2), 146, 2001 |
| 9 |
Formation of relaxed SiGe films on Si by selective epitaxial growth Kawaguchi K, Usami N, Shiraki Y Thin Solid Films, 369(1-2), 126, 2000 |
| 10 |
Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs Wohl G, Dudek V, Graf M, Kibbel H, Herzog HJ, Klose M Thin Solid Films, 369(1-2), 175, 2000 |