| 1 |
Carrier recombination flux in bulk heterojunction polymer:fullerene solar cells: Effect of energy disorder on ideality factor
Garcia-Belmonte G
Solid-State Electronics, 79, 201, 2013 |
| 2 |
Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1-x DHBTs
Zeng YP, Ostinelli O, Liu HG, Bolognesi CR
Solid-State Electronics, 52(8), 1202, 2008 |
| 3 |
Laser gettering of structural-impurity defects in the contacts of metal-intrinsic CdTe with a Schottky barrier
Vorobets GI, Vorobets OI, Strebegev VN, Tanasyuk YV
Applied Surface Science, 254(4), 942, 2007 |
| 4 |
Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs
Tao NG, Liu HG, Bolognesi CR
Solid-State Electronics, 51(6), 995, 2007 |
| 5 |
Relation between solar cell parameters and space degradation
Hadrami M, Roubi L, Zazoui M, Bourgoin JC
Solar Energy Materials and Solar Cells, 90(10), 1486, 2006 |
| 6 |
Temperature dependences of surface recombination DC current-voltage characteristics in MOS structures
Chen Z, Jie BB, Sah CT
Solid-State Electronics, 50(9-10), 1532, 2006 |
| 7 |
Influence of spacer layer on InP/InGaAs delta-doped heterojunction bipolar transistors
Tsai JH, Chu YJ
Materials Chemistry and Physics, 91(2-3), 431, 2005 |
| 8 |
The bias dependence of the non-radiative recombination current in p-n diodes
Grundmann M
Solid-State Electronics, 49(8), 1446, 2005 |
| 9 |
Modelling recombination current in polysilicon solar cell grain boundaries
Ba B, Kane M, Sarr J
Solar Energy Materials and Solar Cells, 80(2), 143, 2003 |
