| 1 |
Electrochemical characteristics of amophous carbon coated silicon electrodes
Vovk OM, Na BK, Cho BW, Lee JK
Korean Journal of Chemical Engineering, 26(4), 1034, 2009 |
| 2 |
Optical and electrical characterization of r.f. sputtered ITO films developed as art protection coatings
Boycheva S, Sytchkova AK, Piegari A
Thin Solid Films, 515(24), 8474, 2007 |
| 3 |
Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates-dependence on oxygen partial pressure
de Carvalho CN, Lavareda G, Fortunato E, Amaral A
Thin Solid Films, 427(1-2), 215, 2003 |
| 4 |
Change of magnetized plasma performance by inserted voltage biased plate
Shinohara S, Matsuyama S, Kaneko O
Thin Solid Films, 407(1-2), 209, 2002 |
| 5 |
Synthesis and characterization of nanoscaled and nanostructured carbon containing materials produced by thermal plasma technology
Klotz HD, Mach R, Oleszak F, Maneck HE, Goering H, Brzezinka KW
Applied Surface Science, 179(1-4), 1, 2001 |
| 6 |
Electronic structure of beta-FeSi2 modified by r.f.-plasma of semiconducting SiH4, GeH4 gas
Matsubara K, Nagao K, Kishimoto K, Anno H, Koyanagi T
Thin Solid Films, 381(2), 183, 2001 |
| 7 |
Effect of r.f.-plasma assistance in hot-wire CVD on properties of mu c-Si : H
Itoh T, Inouchi H, Ohkado K, Chikusa K, Nakamura N, Kondo H, Yoshida N, Nonomura S
Thin Solid Films, 395(1-2), 217, 2001 |
| 8 |
Optical characterization of hydrogenated amorphous carbon (a-C : H) thin films deposited from methane plasma
Hong JG, Goullet A, Turban G
Thin Solid Films, 364(1-2), 144, 2000 |
| 9 |
Influence of single-source precursors on PACVD-derived boron carbonitride thin films
Hegemann D, Riedel R, Oehr C
Thin Solid Films, 339(1-2), 154, 1999 |
| 10 |
Effect of GeF4 addition on the growth of hydrogenated microcrystalline silicon film by plasma-enhanced chemical vapor deposition
Shirai H, Fukuda Y, Nakamura T, Azuma K
Thin Solid Films, 350(1-2), 38, 1999 |
