| 1 |
Understanding porous structure of SBA-15 upon pseudomorphic transformation into MCM-41: Non-direct investigation by carbon replication
Janus R, Wadrzyk N, Lewandowsk M, Natkanski P, Latka P, Kustrowski P
Journal of Industrial and Engineering Chemistry, 92, 131, 2020 |
| 2 |
Combining Phase Separation with Pseudomorphic Transformation for the Control of the Pore Architecture of Functional Materials: A Review
Fajula F, Galarneau A
Petroleum Chemistry, 59(8), 761, 2019 |
| 3 |
Pseudomorphic Transformation of Porous Glasses into Micelle-Templated Silica
Uhlig H, Hollenbach J, Rogaczewski M, Matysik J, Brieler FJ, Froba M, Enke D
Chemie Ingenieur Technik, 89(7), 863, 2017 |
| 4 |
Characterization of Hierarchical Silica Gels with Positron Annihilation Lifetime Spectroscopy
Uhlig H, Zieger S, Bluhm C, Munster T, Kloss G, Krause-Rehberg R, Enke D
Chemie Ingenieur Technik, 88(3), 291, 2016 |
| 5 |
Investigation of the electrochemical oxidation reaction of the borohydride anion in palladium layers on Pt(111)
Oliveira VL, Sibert E, Soldo-Olivier Y, Ticianelli EA, Chatenet M
Electrochimica Acta, 209, 360, 2016 |
| 6 |
Mesoporous Hybrid Materials by Simultaneous Pseudomorphic Transformation and Functionalization of Silica Microspheres
Reber MJ, Bruhwiler D
Particle & Particle Systems Characterization, 32(2), 243, 2015 |
| 7 |
High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers
Wu YC, Tsai JH, Chiang TK, Chiang CC, Wang FM
Solid-State Electronics, 92, 52, 2014 |
| 8 |
Pseudomorphic growth and strain relaxation of alpha-Zn3P2 on GaAs(001) by molecular beam epitaxy
Bosco JP, Kimball GM, Lewis NS, Atwater HA
Journal of Crystal Growth, 363, 205, 2013 |
| 9 |
High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode
Tsai JH, Huang CH, Lour WS, Chao YT, Ou-Yang JJ, Jhou JC
Thin Solid Films, 521, 168, 2012 |
| 10 |
Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs
Shin SH, Kim TW, Song JI, Jang JH
Solid-State Electronics, 62(1), 106, 2011 |
