| 1 |
The refractory periods and threshold potentials of sequential spikes measured by whole-cell recording
Chen N, Chen SL, Wu YL, Wang JH
Biochemical and Biophysical Research Communications, 340(1), 151, 2006 |
| 2 |
Afterhyperpolarization improves spike programming through lowering threshold potentials and refractory periods mediated by voltage-gated sodium channels
Chen N, Chen X, Yu JD, Wang JH
Biochemical and Biophysical Research Communications, 346(3), 938, 2006 |
| 3 |
Investigation of InP/InGaAs pnp delta-doped heterojunction bipolar transistor with extremely low offset voltage
Tsai JH, Kang YC, Hsu IH, Weng TY
Solid-State Electronics, 50(3), 468, 2006 |
| 4 |
Influence of spacer layer on InP/InGaAs delta-doped heterojunction bipolar transistors
Tsai JH, Chu YJ
Materials Chemistry and Physics, 91(2-3), 431, 2005 |
| 5 |
Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1-xAs layer at emitter/base heterojunction
Cheng SY
Solid-State Electronics, 48(7), 1087, 2004 |
| 6 |
Superlatticed negative differential-resistance heterojunction bipolar transistor
Cheng SY, Tsai JH, Lin PH, Liu WC
Journal of Vacuum Science & Technology B, 17(4), 1477, 1999 |
