| 1 |
Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress
Park J, Jang KS, Shin DG, Shin M, Yi JS
Solid-State Electronics, 148, 20, 2018 |
| 2 |
Low temperature polycrystalline silicon with single orientation on glass by blue laser annealing
Jin S, Hong S, Mativenga M, Kim B, Shin HH, Park JK, Kim TW, Jang J
Thin Solid Films, 616, 838, 2016 |
| 3 |
Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification
Hong WE, Kim DH, Kim CW, Ro JS
Thin Solid Films, 520(1), 616, 2011 |
| 4 |
금속 유도 일측면 선결정화에 의해 제작된 다채널 다결정 실리콘 박막 트랜지스터 소자 및 회로의 전기적 특성 평가
황욱중, 강일석, 임성규, 김병일, 양준모, 안치원, 홍순구
Korean Journal of Materials Research, 18(9), 507, 2008 |
| 5 |
Formation of (001)-textured grain in (111) polycrystalline silicon film
Oh JH, Kim EH, Kang DH, Cheon JH, Kim KH, Jang J
Thin Solid Films, 515(12), 5054, 2007 |
| 6 |
Thermal degradation of low temperature poly-Si TFT
Fuyuki T, Kitajima K, Yano H, Hatayama T, Uraoka Y, Hashimoto S, Morita Y
Thin Solid Films, 487(1-2), 216, 2005 |
| 7 |
Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing
Tseng CH, Lin CW, Teng TH, Chang TK, Cheng HC, Chin A
Solid-State Electronics, 46(8), 1085, 2002 |
| 8 |
Influences of directional crystallization using field aided lateral crystallization on the electrical characteristics of poly-Si thin film transistors
Lee JB, Choi DK, Yang YH
Thin Solid Films, 408(1-2), 240, 2002 |
